Design Rules for Phase‐Change Materials in Data Storage Applications

Polymers possess great significance in data storage technology. Taking as an example electrical and optical data storage, the state of development, properties required and opportunities for application of selected polymers are discussed, namely: (i) ferroelectric polymers with low switching voltages and extremely short switching times for electric data storage; and (ii) transparent polymers with low birefringence and high thermal stability for optical data storage.In the area of electrical data storage devices/memories, ferroelectric polymers have not been able to establish themselves up to now due to their long switching time and limited thermal stability. However, recent investigations show that suitable copolymers based on PVDF/TrFE copolymers in ultra‐thin layers can achieve switching times of ≤100 ns. Nevertheless, the limited thermal stability of PVDF/TrFE copolymers prevent them from being integrated into the usual manufacturing process for Si‐based data storage devices (D‐RAM resp. S‐RAM) and thereby frustrates the desired objective of producing nonvolatile random access memories (NV‐RAMs).In the area of optical data storage technology, polycarbonate (PC) has established itself due to its favorable combination of properties. Thus, audio compact disks (CDs) are manufactured exclusively of PC, while high‐flow PC types of high optical purity are clearly the preferred substrate material for optical data storage disks. The increasingly stringent requirements to be met in terms of lower birefringence and better thermal stability mean that the development of suitable modified or substituted polycarbonates is required. The development work being carried out worldwide in this area is reviewed here, and new suitable substituted polycarbonates with lower birefringence and significantly increased thermal stability up to glass temperatures of 238°C are presented.In addition, we deduce structure—property relationships for the above‐mentioned structurally modified polycarbonates, specifically considering rotation potentials along the polymer backbone.

Phase-change materials (PCMs) [111, 112] are a class of materials which have become of tremendous technological importance over the last two decades. Their ability of a fast and reversible phase transition between an amorphous and crystalline phase makes them appropriate for the application in data storage. PCMs based on Ge-Sb-Te (GST) alloys are characterized by a profound change of optical reflectivity and electrical conductivity upon changing from the amorphous to the crystalline phase [113, 114]. As a consequence, these alloys are already widely used in optical data storage, such as compact discs (CDs) or rewritable digital video discs (DVDs).

Phase change materials, in which a material is reversibly switched between an amorphous and crystalline state with corresponding contrast in optical and electronic transport properties, are excellent nonvolatile storage media. Rewritable digital versatile disks (DVDs) and Blu-ray discs are based on such materials in which the optical contrast between the amorphous and crystalline phases enables data storage. Additionally, the large change in electronic transport properties with resistivity contrast of up to six orders of magnitude on crystallization and fast switching speed is at the heart of a new class of nonvolatile data storage devices with electronic read/write operation and potential for future miniaturization. The amorphous state is characterized by saturated covalent bonds, whereas the crystalline phase forms resonant bonds. This bonding mechanism can account for the high electronic polarizabilities that characterize crystalline phase change materials. Interestingly, the relevant electronic states also govern the charge transport in the crystalline phase, leading to unique transport properties including a high degree of electronic localization, in those phase change materials, which are characterized by a high degree of disorder.

Chalcogenides are chemical compounds with at least one of the following three chemical elements: Sulfur (S), Selenium (Sn), and Tellurium (Te). As opposed to other materials, chalcogenide atomic arrangement can quickly and reversibly inter-change between crystalline, amorphous and liquid phases. Therefore they are also called phase change materials. As a results, chalcogenide thermal, optical, structural, electronic, electrical properties change pronouncedly and significantly with the phase they are in, leading to a host of different applications in different areas. The noticeable optical reflectivity difference between crystalline and amorphous phases has allowed optical storage devices to be made. Their very high thermal conductivity and heat fusion provided remarkable benefits in the frame of thermal energy storage for heating and cooling in residential and commercial buildings. The outstanding resistivity difference between crystalline and amorphous phases led to a significant improvement of solid state storage devices from the power consumption to the re-writability to say nothing of the shrinkability. This work focuses on a better understanding from a simulative stand point of the electronic, vibrational and optical properties for the crystalline phases (hexagonal and faced-centered cubic). The electronic properties are calculated implementing the density functional theory combined with pseudo-potentials, plane waves and the local density approximation. The phonon properties are computed using the density functional perturbation theory. The phonon dispersion and spectrum are calculated using the density functional perturbation theory. As it relates to the optical constants, the real part dielectric function is calculated through the Drude-Lorentz expression. The imaginary part results from the real part through the Kramers-Kronig transformation. The refractive index, the extinctive and absorption coefficients are analytically calculated from the dielectric function. The transmission and reflection coefficients are calculated using the Fresnel equations. All calculated optical constants compare well the experimental ones.

Summary form only given. The current trend in rewritable optical data storage is toward the use of novel techniques to achieve densities and data rates that are superior to those achievable in hard disk magnetic recording. We describe the methodology and potential advantages/disadvantages of the solid immersion lens (SIL), front-surface recording, magnetic super resolution (MSR), land & groove recording, and partial response maximum likelihood detection (PRML). We also discuss the differences between magneto-optical and phase-change media.

The substantial amount of data generated every second in the big data age creates a pressing requirement for new and advanced data storage techniques. Luminescent nanomaterials (LNMs) not only possess the same optical properties as their bulk materials but also have unique electronic and mechanical characteristics due to the strong constraints of photons and electrons at the nanoscale, enabling the development of revolutionary methods for data storage with superhigh storage capacity, ultra-long working lifetime, and ultra-low power consumption. In this review, we investigate the latest achievements in LNMs for constructing next-generation data storage systems, with a focus on optical data storage and optoelectronic data storage. We summarize the LNMs used in data storage, namely upconversion nanomaterials, long persistence luminescent nanomaterials, and downconversion nanomaterials, and their applications in optical data storage and optoelectronic data storage. We conclude by discussing the superiority of the two types of data storage and survey the prospects for the field.

Phase Change Materials are solids which are characterized by a unique combination of properties. They exist in an amorphous and a crystalline phase with remarkably different optical and electrical properties caused by an unusual change of bonding when the amorphous phase is crystallized. It is possible to change the phase of such a material in very short times (nanoseconds) and repeatedly between the two phases which makes phase change materials ideal candidates for data storage. This paper reviews in detail the relationship between the bonding mechanisms and the resulting physical properties of phase change materials. It describes the change of bonding from ordinary covalent bonding in the amorphous phase to resonance bonding in the crystalline phase with additional disorder, resulting in unconventional physical properties of phase change materials. These properties lead to the development of phase change data storage applications. Phase change optical data storage, phase change random access memory, and emerging applications including neuromorphic computing are described with particular emphasis on material requirements and material engineering for phase change random access memory.

Chalcogenides—alloys based on group-16 ‘chalcogen’ elements (sulfur, selenium, and tellurium) covalently bound to ‘network formers’ such as arsenic, germanium, antimony, and gallium—have a variety of technologically useful properties, including infrared transparency, high optical nonlinearity, photorefractivity and readily induced, reversible, non-volatile structural phase switching. Such phase-change materials are of enormous interest in the fields of plasmonics and nanophotonics. However, in such applications, the fact that some chalcogenides accrue plasmonic properties in the transition from an amorphous to a crystalline state, i.e., the real part of their relative permittivity becomes negative, has gone somewhat unnoticed. Indeed, one of the most commercially important chalcogenide compounds, germanium antimony telluride (Ge2:Sb2:Te5 or GST), which is widely used in rewritable optical and electronic data storage technologies, presents this behavior at wavelengths in the near-ultraviolet to visible spectral range. In this work, we show that the phase transition-induced emergence of plasmonic properties in the crystalline state can markedly change the optical properties of sub-wavelength-thickness, nanostructured GST films, allowing for the realization of non-volatile, reconfigurable (e.g., color-tunable) chalcogenide metasurfaces operating at visible frequencies and creating opportunities for developments in non-volatile optical memory, solid state displays and all-optical switching devices.

Flexible engineering of advanced phase change materials

The inhibition of CsPbBr3 nanocrystals glass from self-crystallization with the assistance of ZnO modulation for rewritable data storage

Phase-change materials are some of the most promising materials for data-storage applications. They are already used in rewriteable optical data storage and offer great potential as an emerging non-volatile electronic memory. This review looks at the unique property combination that characterizes phase-change materials. The crystalline state often shows an octahedral-like atomic arrangement, frequently accompanied by pronounced lattice distortions and huge vacancy concentrations. This can be attributed to the chemical bonding in phase-change alloys, which is promoted by p-orbitals. From this insight, phase-change alloys with desired properties can be designed. This is demonstrated for the optical properties of phase-change alloys, in particular the contrast between the amorphous and crystalline states. The origin of the fast crystallization kinetics is also discussed.

We propose to encode optical information through the localized depoling of polar chromophores in thin films of grafted polymeric materials with a femtosecond near IR laser source. This disorientation is promoted through the photoisomerization of the azo-dye component induced by a twophoton absorption process. We show that the resulting localized loss in second harmonic generation efficiency can be exploited in data storage applications. The low irradiation powers used allow for a recycling by reheating and repoling the films leading to a rewritable system.

In the current "big data" era, the state-of-the-art optical data storage (ODS) has become a front-runner in the competing data storage technologies. As one of the most promising methods for breaking the physical limitation suffered by traditional ones, the advance of optically stimulated luminescence (OSL) based optical storage technique is now still limited by the simultaneous single-level write-in and readout in a same spot. In this work, to bridge the data-capacity gap, we report for the first time a novel and promising nonphysical multidimensional OSL-based ODS flexible medium for erasable multilevel optical data recording and reading. We tailor multidimensional traps with discrete, narrowly distributed energy levels through (multi-)codoping of selective trivalent rare-earth ions into Eu2+-activated barium orthosilicate (Ba2SiO4). Upon UV/blue light illumination, information can be sequentially recorded in different traps assisted by thermal cleaning with an increase of storage capacity by orders of magnitude, which is addressable individually in the whole domain or bit-by-bit mode without the crosstalk by designed thermal/optical stimuli. Remarkably, good data retention and robust fatigue resistance have been achieved in recycle data recording. Insight is forged from charge carrier dynamics and interactions with traps for a universal method of data storage, and proof-of-concept applications are also demonstrated, thereby providing the way to not only rewritable multilevel ODS but also high-security encryption/decryption.

The extreme electro-optical contrast between crystalline and amorphous states in phase-change materials is routinely exploited in optical data storage and future applications include universal memories, flexible displays, reconfigurable optical circuits, and logic devices. Optical contrast is believed to arise owing to a change in crystallinity. Here we show that the connection between optical properties and structure can be broken. Using a combination of single-shot femtosecond electron diffraction and optical spectroscopy, we simultaneously follow the lattice dynamics and dielectric function in the phase-change material Ge2Sb2Te5 during an irreversible state transformation. The dielectric function changes by 30% within 100 fs owing to a rapid depletion of electrons from resonantly bonded states. This occurs without perturbing the crystallinity of the lattice, which heats with a 2-ps time constant. The optical changes are an order of magnitude larger than those achievable with silicon and present new routes to manipulate light on an ultrafast timescale without structural changes.

Experimental and numerical estimation of thermal conductivity of bio-based building composite materials with an enhanced thermal capacity