Abstract
This paper offers an approximate, but very convenient and accurate, manner to find the desired strip width for substrate integrated gap waveguide (SIGW) with a given characteristic impedance and the conductor and dielectric attenuation constants, without any complicated manual calculations or time-consuming full-wave simulation and optimization iterations. Moreover, the investigation of the transition between SIGW and microstrip lines will prove that an additional transition structure, such as a conventional microstrip taper, is not required any more at millimeter-wave frequencies for the desired transmission performance. This is a useful feature in circuit design and compactness. Both of the above works will be of great help to realize future feeding networks for SIGW antenna arrays or other types of cost-effective SIGW passive components at high frequencies. Two SIGW prototypes, working at Ka and V bands, are fabricated and offer experimental verifications, which present good agreement with the simulation results.
Highlights
To overcome the limited available amount of spectrum at microwave frequencies, millimeter-wave technology has been proposed to enable the future fifth-generation (5G) and beyond systems demanding high-data-rate access, such as high-data- rate wireless communications and automotive radar systems
We propose an approximate, but very convenient and accurate, manner to find the desired strip width for substrate integrated gap waveguide (SIGW) with a given characteristic impedance, including calculations of conductor and dielectric attenuation constants
An approximate, but very convenient and accurate, manner is proposed to help find the desired strip width for SIGW with a given characteristic impedance and the conductor and dielectric attenuation constants, without any complex manual calculations or time-consuming iterations of full-wave simulations
Summary
To overcome the limited available amount of spectrum at microwave frequencies, millimeter-wave technology has been proposed to enable the future fifth-generation (5G) and beyond systems demanding high-data-rate access, such as high-data- rate wireless communications and automotive radar systems. We will present that no additional transition structures, such as a microstrip taper, will be required for the SIGW to be integrated with microstrip lines at millimeter-wave bands Both of the above works will be of great help to make our future designs much simpler and faster, such as feeding networks for SIGW antenna arrays or other types of cost-effective SIGW passive components at high frequencies. The observed deviations between the solid red and dashed green curves or between the dotteddotted black and dotted-dotted-dashed yellow curves reveals that the via-layer substrate may still have a limited effect on the SIGW characteristic This is because that part of the fringing fields leaks into the via-layer due to the non-ideal AMC plane, which we should take into consideration for a more accurate design. If an SIGW with lower substrate εr , such as 3, it is better to choose a larger (20 for example); while a smaller (15 for example)
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