Abstract
Monolithic active pixel sensors using standard low-cost CMOS technology available from industrial manufacturers have demonstrated excellent tracking performances for minimum ionising particles in high energy physics and biomedical imaging applications. A new design of PhotoFET is presented. This structure offers the advantage of integrating amplification inside the sensing element using a PMOS transistor with a high sensitivity and a large output dynamic range. The proposed PhotoFET has been implemented with the AMS 0.35 µm process. The main results of measurements are presented
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