Abstract
A novel torsional RF MEMS capacitive switch design on silicon substrate is presented. The optimized switch topology such as reduction in up-state capacitance results in insertion loss better than ź0.1 dB till 20 GHz. Off to on state capacitance ratio is also improved by 18 fold and isolation is better than ź43 dB at 9.5 GHz. The achieved on state return loss is ź38 dB as compared to ź21 dB at 9.5 GHz. An optimized reduction in contact area and use of floating metal layer increases the switching speed from 56 to 46 μsec. It also increases the switch reliability by alleviating the stiction.
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