Abstract

In order to test the dynamic characteristics of SiC MOSFETs more accurately, it is necessary to redesign the dynamic test platform for SiC MOSFETs. The parasitic inductance of the power circuit of the dynamic test platform is analyzed, and different stacked bus structures are designed according to the test requirements of different devices. In practical use, considering better matching the size of the dynamic test platform and making reasonable use of the internal space of the cabinet, the laminated bus bar is designed as a bent structure, and the two design schemes are simulated and compared. Finally, the splicing type laminated busbar structure is selected.

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