Abstract
Enhancement of the Schottky barrier height was obtained in MBE grown (CoAl or NiAl)/ AlAs/GaAs heterostructures by incorporating ultra thin AlAs layers between the metal and GaAs. By varying the AlAs thickness from 0 to 10 nm the effective barrier height, determined by current-voltage and capacitance-voltage measurements, could be tailored from 0.76 eV to 1.1 eV. Internal photoemission measurements were performed to verify the 1.1 eV barrier height. The temperature dependence of the current-voltage characteristics showed that thermionic emission was the dominant transport mechanism for all thicknesses of AlAs. The results were consistant with transport through the X-band of AlAs.
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