Abstract
A low leakage, low power and high speed memory has been developed using a combination of content addressable memory (CAM) and static random access memory (SRAM) in 150 nm node technology and with a power supply of 1 volt. Data search operation is done by using CAM while SRAMs are used as data storage cells. Data read operation is performed through a read circuit that is controlled by the search result of CAM cells. A priority checker has been incorporated into the CAM cells to make the search operation more precise.
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