Abstract
We present a detailed design study for a novel solid-state focal plane array of silicon avalanche photodiodes (APDs) using an advanced silicon-on-sapphire substrate incorporating an antireflective bilayer consisting of crystalline aluminum nitride (AlN) and amorphous, non-stoichiometric, silicon rich, silicon nitride (a-SiNX<1.33) between the silicon and sapphire. The substrate supports electrical and optical integration of a nearly 100% quantum efficiency, silicon APD capable of operating with wide dynamic range in dual linear or Geiger-mode, with a gallium nitride (GaN) laser diode in each pixel. The APD device and epitaxially grown GaN laser are fabricated within a crystallographically etched silicon mesa. The high resolution 27 μm emitter-detector pixel design enables single photon sensitive, solid-state focal plane arrays (FPAs), with passive and active imaging capability in a single FPA. The square 27 μm emitter-detector pixel achieves SNR>10 in active detection mode for Lambert surfaces at 20,000 m.
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