Abstract
The utilization of heterostructures as photocatalysts for water decomposition is a promising method to tackle contemporary environmental challenges. This research paper presents the design of a direct Z-scheme heterostructure utilizing a monolayer of GeC and a monolayer of arsenene, based on first-principle calculations. The photocatalytic efficiency of this GeC/arsenene van der Waals (vdW) heterostructure in a direct Z scheme has been investigated. The presence of a built-in electric field from the GeC monolayer to the arsenene monolayer has been established through an analysis of band alignment, work function, charge density, and Bader charge. The GeC/arsenene heterostructure exhibits excellent and robust optical absorption efficiency for the sunlight, alongside achieving the maximum solar-to-hydrogen (STH) energy conversion efficiency, amounting to 7.28%, under a biaxial strain of +4%. Furthermore, the Gibbs free energy changes in the hydrogen evolution reaction (HER) and the oxygen evolution reaction (OER) of the GeC/arsenene heterostructure have been calculated. The outcomes indicate that the GeC/arsenene heterostructure is a feasible semiconductor for photocatalytic water splitting.
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