Abstract
We propose a design method for inductorless low-noise amplifiers with active shunt-feedback in 65-nm CMOS and analyze the characteristics. The gain of the NMOS should be larger than that of the PMOS for improvement of the voltage gain and the noise figure. A bandwidth of around 8 GHz was obtained in an analysis using a circuit simulation of the designed low-noise amplifier, which is higher than that of the conventional 0.13 μm CMOS type.
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