Abstract
This paper discusses the features of the design and organization of silicon multiplexers for linear and array-type IR photodetectors. These have been used as a basis for developing nineteen silicon multiplexers intended for combined operation with multielement photodiode detectors based on mercury–cadmium tellurium compound, with multielement photoresistive detectors based on multilayer quantum-well structures, and other types of photodetectors having spectral sensitivity in the 3–5 and 8–16-μm ranges. The multiplexers can be used as a basis for creating hybrid and monolithic photodetectors of various formats for the mid- and far-IR regions with fairly good temperature resolution (<0.02K).
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