Abstract
Silicon carbide (SiC) is presenting as an attractive material for the next generation high voltage power devices which benefits from its excellent material properties. SiC Schottky barrier diode (SBD) compares with silicon based, which has superior characteristics in terms of rectification, reverse recovery time, etc. In this paper, a high voltage 4H-SiC SBD with reverse breakdown voltage of 1800 V and forward current of 40 A is designed as implemented in TCAD. The termination structure of the device is designed with multiple Field Limiting Rings (FLRs). The parameters of the active area and FLRs terminal protection structure are optimized. The steady state and transient characteristics of the device are simulated separately. As a result, the thickness of the N-type epitaxial layer is $16 \mu \mathrm{m}$ and the doping concentration is $5.8\times 10^{15}\text{cm}^{-3}$ . Furthermore, the forward current is 40 A when the forward voltage is 1.60 V at room temperature. Finally, a temperature generation model is added to calculate the lattice temperature profile and analysis areas of possible failure during pulsed operation.
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