Abstract
In recent years, solar energy has received extensive attention as a clean and renewable energy. We present a perfect broadband solar absorber based on tungsten and semiconductor GaAs in this paper. The structure of GaAs grating-GaAs film-W substrate has been proposed. And the finite time domain difference method (FDTD) has been used for the numerical simulation of the model. Broadband absorption has been realized in the 500–1,850 nm, by adjusting the parameters of geometry to excite high-efficiency surface plasmon resonance. The absorption spectrum of the structure can be changed by adjusting the geometric parameters to meet different needs. The proposed absorber has incidence insensitive (0–60°) and high short-circuit current characteristics. The structure is simple and easy to manufacture, and has superior photoelectric properties to be application in photothermal conversion, collection and utilization of solar energy.
Highlights
Solar energy is inexhaustible, reliable and less polluting, which is why it is considered the most potential energy (Zhao et al, 2020)
We proposed a GaAs grating solar absorber which obtain bandwidth with absorption over 90% reaches 1,350 nm
When there is no top layer of GaAs grating, the structure only got a higher absorption at the wavelength from 700 to 1,100 nm, but there is almost no part higher than 90%, and the absorption at the wavelength after 1,100 nm drops rapidly; In the case of a nonmetal W substrate, as shown by the red line, there is an absorption of about 60% only at the beginning of the curve, and thereafter it continues to decrease until it approaches zero
Summary
Reliable and less polluting, which is why it is considered the most potential energy (Zhao et al, 2020). We proposed a GaAs grating solar absorber which obtain bandwidth with absorption over 90% reaches 1,350 nm.
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