Abstract
Dynamic pressure sensors in contrast to static pressure sensors measure pressure changes in liquids or gases generated due to a blast, a propulsion or an explosion, where the temperature is normally high which is above 700°C[1]. Piezoelectric pressure sensors with their inherent advantage of direct transduction capability are drawing attention for high-temperature applications. Lead Zirconate Titanate (PZT) and Zinc Oxide (ZnO) are popular ferroelectric materials for Piezoelectric sensor applications. Aluminum Nitride (AlN) is a suitable candidate for high-temperature applications with its high melting point of 2673 K, the piezoelectric property remaining stable even up to 1423K, the energy band gap of 6.2eV, piezoelectric coefficient d33 of 7pC/N and pressure handling capacity up to 10 MPa. In this study, COMSOL Multiphysics 5.3 was used to analyse the pressure sensing capability of AlN film by optimizing the crystal orientation and the dimension of AlN in addition to studying suitability of using at high temperature. Also a comparison is done on the high temperature performance of pressure sensor using Silicon and Silicon Carbide as diaphragm.
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