Abstract
Des muticouches nanometriques ont ete deposees par pulverisation diode rf ultravide dans une chambre equipee d'ellipsometres in situ. L'influence de la composition, de la rugosite, de la presence d'une couche d'interface et du nombre de periodes a ete estimee afin d'optimiser les empilements pour la reflexion de rayons X mous. Le comportement de ces structures sous recuit thermique a ete observe. Enfin des reseaux ont ete realises avec succes
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