Abstract
The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device’s electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET’s output current (174.2 mA mm−1) is much higher than that of the planar-type device (45.2 mA mm−1), and the on/off ratio and subthreshold swing are more than 108 and as low as 110 mV dec−1, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.
Highlights
Been developed in the Si, InGaAs, and GaN-based metal-oxide-semiconductor field-effect transistors (MOSFETs) to extend device downscaling, reduce leakage current, and control device short channel effects[19,20,21,22,23,24,25,26,27]
The positive photoresist FEP-171 was coated on the sample and exposed using an electron beam (EB) lithography system to form fin models [Fig. 1(a)-2]
After the photoresist was developed, the W metal and the diamond substrate at the photoresist-free area were dry-etched in SF6 and O2 ambients, respectively, using an inductively-coupled plasma reactive ion etching (ICP-RIE) system [Fig. 1(a)-3 and 4]
Summary
Been developed in the Si-, InGaAs-, and GaN-based MOSFETs to extend device downscaling, reduce leakage current, and control device short channel effects[19,20,21,22,23,24,25,26,27]. Because the triple-gate MOSFET can allow carriers to travel in both its planar and lateral sides, the device current output is much higher than that of a planar-type device with the same area. The fabrication of H-diamond triple-gate MOSFETs is promising for extension of device downscaling and enhancement of the device electrical properties. We describe the design and fabrication of H-diamond triple-gate MOSFETs on a single crystalline diamond substrate. The electrical properties of these devices are compared with those of planar-type MOSFETs. The absolute IDS,max of the triple-gate MOSFET is 174.2 mA mm−1, which is much higher than the 45.2 mA mm−1 value of the planar-type device. The on/off ratio and the subthreshold swing (SS) of the H-diamond triple-gate MOSFET are higher than 108 and as low as 110 mV dec−1, respectively
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