Abstract
An inchworm controlled microfabricated detector system with laser interferometric feedback has been developed to provide an absolute position characterization of the electron emission from gated field emitter arrays (FEAs) in an ultra-high-vacuum (UHV) environment with nanometric precision. The emission characteristics of single tip and multiple tip FEAs are required to provide comparison with theory and simulation in order for these to be predictably used as a reliable source of high current density for high frequency amplifiers and oscillators. In its present form, the instrumentation is used to determine the angular distribution of the field emitted electrons. The addition of a few components will allow the measurement of emittance of the FEAs for electron gun design. Angular distribution of the electrons is measured by means of a microfabricated detector which is manipulated within an UHV environment with nanometric precision. The absolute location of the detector (within 80 nm uncertainty) is determined via laser interferometry. The details of the instrumentation with some preliminary experimental results are shown.
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