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https://doi.org/10.1109/tmtt.2010.2042857
Copy DOIPublication Date: May 1, 2010 | |
Citations: 203 |
This paper describes the design and measurement of a wideband (W-band) passive radiometer chip developed in a standard 0.12-?m SiGe BiCMOS technology (IBM8HP, ft /fmax = 200/265 GHz). Design equations, simulations, and measurements are presented for a 94-GHz square-law detector and wideband low noise amplifier, and an 80-110-GHz single-pole double-throw switch. A total-power radiometer is presented, which can achieve a temperature resolution of ? 0.69 K (30-ms integration time) with periodic calibration or chopping above 10 kHz. A switched Dicke radiometer chip is also presented, which addresses the 1/f noise of the total-power radiometer, and can achieve a temperature resolution of 0.83 K with a 30-ms integration time. This performance is comparable to current III-V imaging modules, and demonstrates, to our knowledge, the first implementation of a SiGe or CMOS W -band radiometer on a single chip.
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