Design and Analysis of High Performance CMOS Temperature Sensor Using VCO

Abstract

This paper presents a CMOS temperature sensor which is designed using self-bias differential voltage controlled ring oscillator at 180 nm TSMC CMOS technology to achieve low power. This paper focuses on design, simulation, and performance analysis of temperature sensor and its various components. In this used VCRO has full range voltage controllability along with a wide tuning range from 185 to 810 MHz, with free running frequency of 93 MHz. Power dissipation of voltage controlled ring oscillator at 1.8 V power supply is 438.91 µW. Different parameters like delay and power dissipation of individual blocks like CMOS temperature sensor component, voltage level shifter, counter and edge triggered D flip-flop are also calculated with respect to different power supply and threshold voltages. Power dissipation and delay of VCRO-based temperature sensor at 5 V power supply is 80.88 mW and 7.656 nS, respectively, and temperature range is from −175 to +165.