Abstract
In this paper, we propose, illustrate and validate a design for a double-gate tunnel field effect transistor (TFET) in which dual-material gate has been incorporated, i.e., The semiconductor is un-doped and the source and drain regions are induced by the concept of charged plasma. The simulations for the device show significant improvement from single gate devices that may or may not use dual-material gates. Double Gate TFET has been designed using acceptable parameters, thus providing an on-current (ION) of 0.018 × 10−5 A and an off-current (IOFF) of the order of 10−17.
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