Abstract
A formalism of the statistical approach to describing de Haas–van Alphen oscillations known as the Lifshitz–Kosevich formula is developed as applied to a low-dimensional system with an effective carrier mass depending on an external magnetic field. The statistical approach makes it possible to perform more detailed interpretation of the experimental results and analyze the interrelation of the dependence found by us of the effective carrier mass with the individual features of the structure of a silicon nanosandwich caused by the formation of negative-U δ barriers in its composition.
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