Abstract
The use of the nuclear reaction D( 3He, p) 4He for the depth profiling of deuterium was studied. The detection at backward angles of the protons which have energies in excess of 13 MeV, presents distinct advantages with respect to the more conventional method of detecting the associated α particles. The various contributions to the depth resolution in α-Si have been measured or calculated, taking into account detector acceptance angle, size of the probing 3He beam, energy straggling, multiple scattering and lateral spread contributions. Sensitivities are discussed with respect to depth resolution requirements. The method has been applied to deuterium depth profiling in amorphous silicon hydrogenated by implantation or plasma diffusion of deuterium.
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