Abstract
A modified method has been developed for the chemical deposition of thin films of MoS 2 and MoSe 2 on glass substrate at 363 K. For MoS 2 and MoSe 2 deposition instead of hydrazine hydrate sodium dithionite was used as a reducing agent. Variation of thickness with different bath parameters have been studied to obtain thickest possible deposition. X-ray characterization, optical absorption have been performed to confirm the deposition of MoS 2 and MoSe 2.
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