Abstract
Iridium thin films are deposited on sub‐micrometer three‐dimensional trench structures by plasma‐enhanced metal‐organic chemical vapor deposition (PE‐MOCVD). The iridium precursor used in this study is (ethylcyclopentadienyl)(1,5‐cyclooctadiene)iridium [Ir (EtCp)(1,5‐COD)]. Various process conditions at substrate temperatures from 300 °C to 450 °C, with and without plasma enhancement, are investigated and compared. Crystal structure of the deposited iridium films is analyzed by X‐ray diffraction (XRD). Step coverage of the deposited iridium films on three‐dimensional trench structures is analyzed by scanning electron microscopy (SEM). Surface morphology is quantitatively evaluated by atomic force microscopy (AFM) and the electrical resistivity of the deposited Ir films is measured by the four‐point probe method.
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