Abstract
Nanostructured thin iridium films were deposited by pulse CVD. Tris(acetylacetonato)iridium(III) was used as the precursor. The thermochemical properties of this precursor were determined by mass spectrometric monitoring its vapour phase interaction with heated surfaces both in vacuum and in atmospheres of H2 and О2. The results obtained provided a guide for understanding which pulse CVD process conditions to use for growing thin films of iridium using hydrogen or oxygen as gas reactant. Deposited iridium film thicknesses were varied from 5 to 25 nm. Iridium films were characterized by means of SEM, AFM, HRTEM and XPS.
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