Abstract
Stepwise evaporations of indium have been done at room temperature on Sb(111) single crystals in order to study the interface and the InSb formation conditions. From the Auger measurements, we suggest a Stranski–Krastanov growth mode where the first monolayer seems to contain a significant amount of InSb. The InSb formation was further studied by Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) by annealing a thick indium overlayer on Sb(111). Comparison is made to our measurements on an InSb single crystal and also to results from the literature. Low energy electron diffraction (LEED) shows the first monolayer to be disordered. However, the Sb single crystal covered with an indium overlayer restores a (2×2) or (1×1) LEED pattern after annealing, and InSb is formed in this case.
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