Abstract
The relatively small band gap values (close to leV) of CuInSe 2 thin films limits the conversion efficiencies of completed CuInSe 2 /CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to increase the band gap by substituting indium with gallium. In this study, sputtered copper-indium alloys were exposed to a H 2 Se/Ar atmosphere under defined conditions in order to produce partially reacted CuInSe 2 structures. These films were subsequently exposed to a H 2 S/Ar atmosphere to produce monophasic CuIn(Se, S) 2 quaternary alloys. The homogeneous incorporation of S into CuInSe 2 led to a systematic shift in the lattice parameters and band gap of the absorber films. From these studies optimum selenization/sulfurization conditions were determined for the deposition of homogeneous CuIn(Se, S) 2 thin films with an optimum band gap values between 1.15 and 1.2 eV.
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