Deposition of Amorphous Carbon Thin Films via Bias Assisted Pyrolysis-CVD

Abstract

The as deposited amorphous carbon (a-C) thin films were successfully deposited by using ethanol and palm oil precursors via a novel bias assisted pyrolysis-CVD ranging from 300oC to 550oC with constant of negative bias -40V and -50V in 3h and 1h deposition. The thin films were characterized by atomic force microscopic (AFM), field emission scanning electron microscopic (FESEM), and I-V measurement. The resistivity of as deposited a-C thin films using ethanol precursor at 300oC, 350oC, 400oC and 500oC were 9.57 x106Ω/cm, 9.44 x106Ω/cm, 9.81 x105Ω/cm and 337738.124 Ω/cm respectively and conductivity were 1.00445 x10-7 cm/Ω, 1.0593 x10-7,cm/Ω, 1.01963x10-6 cm/Ω, and 2.67825 x10-6 cm/Ω. For palm oil precursor (400oC-550oC), the resistivity were calculated, 3.83x104Ω/cm, 1.32x104Ω/cm, 3.77x104Ω/cm, and 4.19x105Ω/cm respectively while conductivity were 2.61 x 10- 5 cm/Ω, 7.60 x 10- 5 cm/Ω, 2.65 x 10- 5 cm/Ω, and 2.39 x 10- 6 cm/Ω. The samples showed all the resistivity values were in the range of semiconductor. The results showed that increasing temperature decreased resistivity of thin films for ethanol precursor. The resistivity thin films obtained from palm oil precursor were smaller as compared with ethanol precursor.