Abstract
This work deals with the deposition of thin films using an atmospheric pressure direct current nitrogen plasma jet with tetramethyldisiloxane as precursor. The effect of O2 flow and plasma discharge power on film deposition rate and film chemical characteristics is investigated in detail by surface profilometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. It is found that a higher deposition rate is obtained at higher oxygen flow rates and higher discharge powers. Increasing discharge power shows a certain amount of capability to transfer low oxygen content bonds to high oxygen content bonds. Organic films can be deposited in a pure nitrogen atmosphere. The film chemical composition can be tuned to a more inorganic structure by admixture of O2 leading to an increase in SiO4 units at high oxygen flow rates.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
