Abstract
Zinc oxide (ZnO) thin films were deposited using modified pulsed-spray pyrolysis on glass substrates. Depositions were carried out using N2 as the carrier gas and analysed with respect to the rate of deposition. X-ray analysis revealed the presence of mixed crystallization with a nanocrystalline structure of about 6.9 nm dispersed in the amorphous matrix. A negative trend between the bandgap and resistivity was observed with the decrease in the deposition rate. A lowest bandgap of 3.1 eV with a resistivity value of 1.6 × 10−2 Ω cm was achieved at a lowest deposition rate of 1.3 nm min−1. Hot-probe measurement revealed the p-type conductivity for the film deposited at a lowest deposition rate of 1.3 nm min−1. Details about the influence of pulsed-spray deposition for the achievement of this negative trend between bandgap and resistivity will be discussed in this paper.
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