Abstract
Ti and W-containing diamond-like carbon (DLC) films were prepared on silicon wafer substrate by a process combining reactive magnetron sputtering with plasma source ion implantation (PSII). Ti and W were deposited by r.f. magnetron sputtering of a metal target and PSII using hydrocarbon gas. Ar/C 2H 2 mixed gas was introduced into the discharge chamber. The negative high voltage pulse (−10 kV, 100 Hz, 100 μs) superposed on a d.c. voltage of −0.5 kV was applied to the substrate holder. The structure of the films changed from metal containing amorphous DLC, to a composite of metal containing DLC and metal carbides with increasing metal content in the films. The sheet resistivity of the films was decreased abruptly with increasing metal content in the films. The tribological properties of the films were improved by W doping.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
