Abstract
The plane wave expansion method is used to calculate photonic band structures for transverse electric (TE) polarization, in a two-dimensional (2D) photonic crystal with a hexagonal lattice composed air holes with triangular cross sections embedded in a semiconductor (GaAs) background. This study focuses on the dependence of the GaAs dielectric constant on pressure and temperature. The air holes are isosceles triangles with fixed areas. We found that the width of the photonic band gap increases, when the internal angle of the triangle and the angle of rotation in the unit cell are increased at constant hydrostatic pressure values. The width of the photonic band gap remains unchanged when the hydrostatic pressure is increased at fixed internal and rotation angle values. In addition, when considering an H1 defect in the crystal, using the supercell technique, we find that the number of defective modes within the photonic band gap increases with the triangle rotation in the unit cell.
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