Abstract
The resistance of precipitation-treated Czochralski-grown silicon wafers to warpage has been investigated using crystals containing oxygen at a concentration of 5.5-12.3×1017 atoms/cm3. The precipitation softening is effectively suppressed if the oxygen concentration is lower than a threshold value of about 8×1017 atoms/cm3. In wafers with oxygen concentrations of 5.5-8×1017 atoms/cm3, oxygen precipitation proceeds slowly, resulting in slow growth of bulk stacking faults and few dislocation sources. In MOS image-sensor devices, the wafers with such oxygen concentrations have few crystal defects within the area of the photodiodes after processing, which cause the fatal failure of white blemishes detected as white scratches on output pictures.
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