Abstract
Compositionally graded Pb(Zr ,Ti)O 3 thin films were prepared on the Pt(1 1 1)/Ti/SiO 2/Si, LNO/Si(1 0 0) and LNO/Pt(1 1 1)/Ti/SiO 2/Si substrates by a modified sol–gel method and rapid heat-treatment. The composition depth profile of a typical up-graded film was determined using a combination of auger electron spectroscopy and Ar-ion etching. The crystallographic orientation and the microstructure of the resulting graded PZT thin films on the different substrates were characterized by XRD. The dielectric and ferroelectric properties of the graded PZT films were discussed. The graded PZT films on LNO/Pt/Ti/SiO 2/Si and LNO/Si(1 0 0) substrates have larger dielectric constant and remnant polarizations compared to that grown on Pt/Ti/SiO 2/Si substrates.
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