Abstract
Correlation between measured shifts in the flatband voltage, , of Si‐MOS structure and physical distribution of cesium ions in as measured by secondary ion mass spectrometry has been investigated. Direct implantation of Cs into and into Si with the subsequent oxide growth results in different profiles that depend on thermal processing. Corresponding negative are increasing with the amount of Cs in in the first case and in the latter case depend also on the height of cesium peak at interface. The change in the interface state density due to Cs is small.
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