Abstract
GaN layers were grown on (001)GaAs substrates by metal-organic molecular beam epitaxy (MOMBE), using electron cyclotron resonance (ECR) plasma activated nitrogen and monomethyl hydrazine (MMHy) as a nitrogen (N) source. We investigated dependence of GaN crystalline quality, growth rate and contamination, on the N source. It was found that the growth rate for a borosilicate glass guide tube was higher than that for quartz guide tube, suggesting that the quartz guide tube kills N radicals. Unexpectedly, higher oxygen and carbon contamination was detected for the layer grown with the ECR plasma gun without the ion extraction magnet and quartz, than those for the layer grown with MMHy.
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