Abstract
Metastable light-induced changes in hydrogenated amoiphous silicon (a-Si:H) have been monitored by stationary single photocarrier charge collection in p-i-n diodes under reverse bias. The influence of the following parameters has been systematically investigated: i-layer thickness, applied voltage and illumination time and energy. A strong dependence of cell degradation on i-layer thickness is observed. In the case of degraded diodes superlinear current vs. voltage (Iph αVm) in the low voltage regime were observed. These results can be related to space-charge-limited photocurrents. The results from variation of photon energy and single and/or double carrier injection indicate that recombination rather than single-carrier trapping plays a key role in metastable defect creation.
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