Abstract
The electron density dependence of the electron spin relaxation time in a system of electrons interacting with phonons through phonon-modulated spin-orbit coupling was calculated using the formula for electron spin resonance derived by the projection-reduction method. The electron spin relaxation time in GaAs increased with increasing electron density, and the electron density was found to affect the electron spin relaxation differently according to temperature. The electron spin in GaAs was relaxed mainly by optical phonon scattering at high electron densities and piezoelectric phonon scattering at relatively low electron densities.
Highlights
Electron spin relaxation in semiconductors has attracted considerable attention because of its essential role in the application of spintronic devices [1]-[3]
Murdin et al [16] show that the carrier density dependence of the spin lifetime in InAs is reversed at ne = 1×1023 m−3 and suggest that electron-electron interaction affects the dependence of the spin lifetime on the carrier concentration
The acoustic strain induced by pressure in a crystal whose lattice lacks inversion symmetry gives rise to a macroscopic electric field, which is assumed to be proportional to the derivative of
Summary
Electron spin relaxation in semiconductors has attracted considerable attention because of its essential role in the application of spintronic devices [1]-[3]. The DP mechanism has been shown to dominate the spin relaxation at high temperatures [7]-[10], whereas Dzhioev et al [11] report that the dependence of the spin-relaxation rate on the electron mobility in lightly doped n-GaAs bulk crystals disagrees with the results predicted by the DP mechanism. They attribute the spin relaxation to the electron-electron interaction. The electron density and temperature dependence of the spin relaxation time in GaAs are calculated and the results are discussed by a comparison with the experimental data
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