Abstract
The grain growth kinetics of 8YSZ ceramics processed using spark plasma sintering (SPS) has been investigated in the temperature ranging from 1100°C to 1500°C. The activation energy during SPS densification was obtained as 332 kJ/mol with grain boundary diffusion as a dominant mechanism. Further, the effect of CeO2 on the densification kinetics of 8YSZ ceramic processed via SPS and conventional sintering (CS) has been delineated. The lower grain boundary mobility of CS-processed composites (an order of magnitude lower than SPS) is attributed to the solute drag and lattice distortion mechanism. However, no significant change in the grain boundary mobility was observed with CeO2 addition (~ 14.7–43.9 × 10−18 m3/N/s for CS and 107.2–116.7 × 10−18 m3/N/s for SPS) revealing that the defect concentration is nearly constant in 8YSZ. The study highlights the effect of sintering techniques (SPS and CS) and reinforcement (CeO2) on engineering the desired microstructure of 8YSZ ceramic.
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