Abstract
Electroabsorption properties of an InGaAs/InGaAlAs/InAlAs coupled-quantum-well structure were studied from 10 to . At each temperature, the change of the quantum-well absorption coefficient for a fixed drive voltage can be fairly constant at a typical value of over a spectral range of at least 100 nm with very small on-state absorption. For a fixed wavelength range of 40 nm, these attractive characteristics are approximately maintained over the entire temperature range of . No temperature control would be necessary for such a device in an outdoor installation.
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