Abstract
Here we report InGaN-based red light-emitting diodes (LEDs) grown on () β-Ga2O3 substrates. AlN/AlGaN strain-compensating layers and hybrid multiple-quantum-well structures were employed to improve the crystalline-quality of the InGaN active region. A bare LED showed that peak wavelength, light output power, and external quantum efficiency were 665 nm, 0.07 mW, and 0.19% at 20 mA, respectively. As its forward voltage was 2.45 V at 20 mA, the wall-plug efficiency was 0.14%. The characteristic temperature of the LEDs was 222 K at 100 mA evaluated from the temperature dependence of electroluminescence.
Highlights
The crystalline-quality of InGaN layers depends on growth temperature
This is because the lower temperature leads to many defects and rough surfaces by insufficient surface migration of adatoms.14) The second issue is a tremendous strain in the InGaN layers since there is a significant lattice mismatch between InGaN and GaN
Modification of the flow-channel could achieve an increase in the growth temperature of InGaN layers.4,19) the rapid growth rate increased growth temperatures.20,21) High-temperature InGaN growth is a crucial technique to improve crystalline-quality of the high
Summary
Demonstration of low forward voltage InGaN-based red LEDs. Applied Physics Express. The first issue is low-temperature growth for high-Incontent InGaN. The crystalline-quality of InGaN layers depends on growth temperature.
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