Abstract
Enhancement of the modulation bandwidth of the directly modulated semiconductor laser has attracted tremendous attention for applications in optical fiber communication and optical interconnects. However, modulation bandwidth is enhanced by some special technology such as integrating the active region or passive region regularly, which lead to low power and complex fabrication. Here we design and demonstrate a monolithic integrated three-active-section distributed feedback (TAS-DFB) laser with enhanced bandwidth theoretically and experimentally. The laser includes three sections: the DFB section, feedback section and active phase section. The three sections share the same multiple quantum-well structure. To enhance the modulation bandwidth beyond the intrinsic modulation bandwidth, both photon-photon resonance (PPR) and detuned loading (DL) effects are utilized to achieve over 55 GHz. The active phase section shows promise in achieving high bandwidth with PPR and relatively high output power of ∼ 10 mW at 25 °C under continuous-wave (CW) operation simultaneously. The fabrication process of the TAS-DFB laser is simplified due to the conventional and identical active layer structure.
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