Abstract
We have successfully demonstrated a 1 Kb spin-orbit torque (SOT) magnetic random-access memory (MRAM) multiplexer (MUX) array with remarkable performance. The 1 Kb MUX array exhibits an in-die function yield of over 99.6%. Additionally, it provides a sufficient readout window, with a TMR/R P_sigma% value of 21.4. Moreover, the SOT magnetic tunnel junctions (MTJs) in the array show write error rates as low as 10−6 without any ballooning effects or back-hopping behaviors, ensuring the write stability and reliability. This array achieves write operations in 20 ns and 1.2 V for an industrial-level temperature range from −40 to 125 °C. Overall, the demonstrated array shows competitive specifications compared to the state-of-the-art works. Our work paves the way for the industrial-scale production of SOT-MRAM, moving this technology beyond R&D and towards widespread adoption.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
