Abstract
The article presents the results of investigation of the degradation of electrical and optical characteristics of green InGaN-based LEDs under tests at constant direct current for 5000 hours. It is determined that LEDs which were subjected to a 4-hours exposure of high-density pulsed current degrade slowly than LEDs not exposed to this exposure. The external quantum efficiency (EQE) of the short-wave components of the radiation spectrum of the LEDs when testing reduced by a greater amount than the EQE of the long-wave components of the spectrum. For LEDs that have a current-voltage characteristic with a non-ideality factor of m≈2, the rate of decrease of optical power during testing is lower than for LEDs with m> 2.
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