Abstract
INTRODUCTION. Molybdenum disilicide(MoSi2) is used mainly as an electrical conductor in integrated circuits and as a heating element in furnaces. It is now being studied as a potential high temperature structural material because of its good strength and oxidation resistance. MoSi2 has the tetragonal Cllb crystal structure, space group 14/mmm, with a=3.202Å and c=7.85lÅ. At temperatures >1900°C, MoSi2 has the hexagonal C40 structure where the basal planes have ABC stacking. This compares with the AB stacking of the pseudo-hexagonal {110} planes of the tetragonal structure. In the present paper we will describe and discuss TEM observations of defects in MoSi2 prepared variously by hot pressing, plasma spraying and mechanical alloying.
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Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
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