Abstract
Using deep-level transient spectroscopy, we have characterized the energy levels, barriers for electron capture, and introduction rates of the defects introduced by electron irradiation in liquid-phase epitaxy grown n-type (Te)Ga1−xAlxAs layers of various alloy composition (x=0.25, 0.40, 0.60, and 0.80). We observed five defects which present various type behaviors: energy levels linked to the valence band or to the L conduction bands, constant barriers, or varying in a manner consistent with the band structure. These results are in agreement with the understanding obtained previously on electron-induced defects in GaAs.
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