Abstract
Solution-processable indium oxide quantum dots (In2O3) were introduced into a MAPbI3 film to solve the problem of low MAPbI3 film quality caused by inherent defects. Compared with the MAPbI3 film, the MAPbI3:In2O3 film exhibited an optimized time-resolved photoluminescence component ratio and improved carrier dissociation and transport efficiency. When the MAPbI3:In2O3 film was used to fabricate solar cells instead of the MAPbI3 film, the fill factor enhanced from 76.32% to 80.63%, the short circuit current density increased from 20.18 mA cm−2 to 21.32 mA cm−2, and the power conversion efficiency improved from 13.96% to 16.18% in the standard AM 1.5 illuminated condition, respectively.
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