Abstract
We have grown multilayer structures of alternating and pure Si layers on (100) Si substrates by means of rapid thermal processing chemical vapor deposition (RTPCVD) at 900°C, using and as source gases and as a carrier gas. In strained layers, the only defects were Ge interstitial loops confined near the interface. In layers that were partially relaxed, misfit dislocations, stacking faults, and threading dislocations were observed. Ge pile‐up was also observed at the interface of relaxed layers containing high densities of threading dislocations.
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