Abstract
The defect levels produced in antimony- or arsenic-doped germanium by irradiation with 1.5 MeV electrons and the annealing behaviour of these materials were studied by the DLTS technique. The position of the levels formed by radiation-induced defects was determined and the dependence of the level position on the species and concentration of the impurity atoms are reported. The defects associated with the Ec–0.40 eV level and the Ec–0.23 eV level are thought to be formed by the association of antimony atoms with unidentified defects. From the results of annealing under injection, the defects associated with the Ec–0.23 eV level are considered to be annealed by a recombination-enhanced mechanism.
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