Abstract
In this letter we report results on photoluminescence (PL) of nitrogen-doped a-Ge:H thin films excited with the 2.4 eV line of an Ar + laser. The samples were prepared by rf sputtering a c-Ge target in a gaseous mixture of Ar+H 2+N 2. The PL of samples having an impurity concentration lower than 5×10 19 cm −3 was measured in the 110–180 K temperature range. The emission spectra show a broad band peaking at 0.65 eV, the origin of which is tentatively associated to a negatively charged dangling bond–valence band tail transition. The interpretation is consistent with available data on doping effects in a-Ge:H and with PL data reported in the literature.
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